Program

Requirements to oral presentations

Duration of plenary lectures - 30 minutes
Duration of invited lectures - 25 minutes
Duration of oral speech - 20 minutes

When delivering a presentation, speakers can demonstrate their slides in PPT or PDF formats. Presentations will be displayed on the projection screens in the break-out session halls. Aspect ratio is 16:9.

Speakers should adhere to the time allotted for a presentation as per the approved programme, including answers to questions and debates with the audience. Duration of a presentation can be changed in agreement with a representative of the section.

Session 8. Thin film transistors

Stork Room 1
Chairman: Dr. Vladimir Shiripov

9:00 | O-46 "Memory-in-pixel circuit with low temperature poly-Si and oxide TFTs"
Jongbin Kim, Seung-Woo Lee (Kyung Hee University, Korea)
Hoon-Ju Chung (Kumoh National Institute of Technology, Korea)

9:20 | O-47 "A stable FHD display device based on BCE IGZO TFTs"
G.Wan, S.Ge, X.Lin (Peking University, China)
S.Li, C.Gong (China Star Optoelectronics Semiconductor Display Technology Co., Ltd, China)

9:40 | O-48 "Robust performance and stability of In₂O₃ thin-film transistors with atomic-layer-deposited channels"
Qian Ma, Letao Zhang, Shengdong Zhang (Peking University Shenzhen Graduate School, China)

10:00 | O-49 "InGaZnO based TFT structures for active matrix addressing"
B.Kazarkin, A.Stepanov, A.Smirnov (Belarusian State University of Informatics and Radioelectronics, Belarus)
V.Shiripov, E.Khokhlov, A.Ksendzov (IZOVAC Technologies Ltd., Belarus)

Session 9. OLED displays

Stork Room 2
Chairman: Prof. Vladimir Chigrinov

9:00 | O-50 "High efficient all-solution OLEDs and their transient electroluminescence"
Suling Zhao, Dandan Song, Bo Qiao, Zheng Xu (Beijing Jiaotong University, China)

9:20 | O-51 "Large-scale patterned quantum dots as color conversion layer for organic light emitting diode by inkjet printing"
Zhiping Hu, Yongwei Wu (Peking University Shenzhen Graduate School, China; China Star Optoelectronics Semiconductor Display Technology Co., Ltd., China)
Hang Zhou (Peking University Shenzhen Graduate School, China)
Wenxiang Peng, Shijie Zhang, Dongze Li, Yuanyuan Li, Shibo Jiao, Shu-jhih Chen, Chia-Yu Lee (China Star Optoelectronics Semiconductor Display Technology Co., Ltd., China)

9:40 | O-52 "High-performance near-infrared organic light-emitting materials and devices"
Juan Qiao (Tsinghua University, China)

10:00 | O-53 "Al₂O₃ electron suppressing layer for brighter infra-red quantum dot-based light-emitting diode"
Mikita Marus, Huaying Zhong, Depeng Li, Xiao Wei Sun (Southern University of Science and Technology, China)
Yong Xia, Kang Wang, Jianbing Zhang (Huazhong University of Science and Technology, China)

10:20 | O-54 "Solution-processed quasi-two-dimensional perovskite light-emitting diodes using organic small molecular electron transporting layer"
Yongwei Wu, Zhiping Hu (Peking University Shenzhen Graduate School, China; China Star Optoelectronics Technology Co., Ltd, China)
Shengdong Zhang (Peking University Shenzhen Graduate School, China)
Miao Duan, Pei Jiang, Dongze Li, Chia-Yu Lee (China Star Optoelectronics Technology Co., Ltd, China)